IMW120R090M1HXKSA1
Manufacturer Part Number | IMW120R090M1HXKSA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | SICFET N-CH 1.2KV 26A TO247-3 |
Package | PG-TO247-3-41 |
In Stock | 14430 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$4.406 | $4.048 | $3.419 | $3.042 | $2.79 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 14430 pieces of Infineon Technologies IMW120R090M1HXKSA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
Vgs (Max) | +23V, -7V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | PG-TO247-3-41 |
Series | CoolSiC™ |
Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
Power Dissipation (Max) | 115W (Tc) |
Package / Case | TO-247-3 |
Package | Tube |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 707 pF @ 800 V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Base Product Number | IMW120 |
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