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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IMW120R090M1HXKSA1
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IMW120R090M1HXKSA1

Manufacturer Part Number IMW120R090M1HXKSA1
Manufacturer Infineon Technologies
Detailed Description SICFET N-CH 1.2KV 26A TO247-3
Package PG-TO247-3-41
In Stock 14430 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000
$4.406 $4.048 $3.419 $3.042 $2.79
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Vgs (Max) +23V, -7V
Technology SiCFET (Silicon Carbide)
Supplier Device Package PG-TO247-3-41
Series CoolSiC™
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Power Dissipation (Max) 115W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Base Product Number IMW120

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IMW120R090M1HXKSA1 Datasheet PDF