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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IMT65R022M1HXUMA1
Infineon Technologies

IMT65R022M1HXUMA1

Manufacturer Part Number IMT65R022M1HXUMA1
Manufacturer Infineon Technologies
Detailed Description SILICON CARBIDE MOSFET
Package PG-HSOF-8-1
In Stock 6527 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500
$9.877 $9.111 $7.78 $7.063
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id -
Vgs (Max) -
Technology SiCFET (Silicon Carbide)
Supplier Device Package PG-HSOF-8-1
Series CoolSiC™
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) -
Package / Case 8-PowerSFN
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature -
Mounting Type Surface Mount
FET Type -
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 18V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C -

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IMT65R022M1HXUMA1 Datasheet PDF