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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IGLD60R070D1AUMA3
Infineon Technologies

IGLD60R070D1AUMA3

Manufacturer Part Number IGLD60R070D1AUMA3
Manufacturer Infineon Technologies
Detailed Description GANFET N-CH
Package PG-LSON-8-1
In Stock 5899 pcs
Data sheet Mult Dev DS Rev 9/Nov/2021
Reference Price (In US Dollars)
1 10 100 500
$8.523 $7.861 $6.713 $6.094
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Vgs (Max) -10V
Technology GaNFET (Gallium Nitride)
Supplier Device Package PG-LSON-8-1
Series CoolGaN™
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 114W (Tc)
Package / Case 8-LDFN Exposed Pad
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)

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IGLD60R070D1AUMA3 Datasheet PDF

Data sheet