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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > IDC51D120T6MX1SA3
Infineon Technologies

IDC51D120T6MX1SA3

Manufacturer Part Number IDC51D120T6MX1SA3
Manufacturer Infineon Technologies
Detailed Description DIODE GP 1.2KV 100A WAFER
Package Sawn on foil
In Stock 4381 pcs
Data sheet Part Number Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 2.05 V @ 100 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology Standard
Supplier Device Package Sawn on foil
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Package / Case Die
Product Attribute Attribute Value
Package Bulk
Operating Temperature - Junction -40°C ~ 175°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 18 µA @ 1200 V
Current - Average Rectified (Io) 100A
Capacitance @ Vr, F -
Base Product Number IDC51D120

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IDC51D120T6MX1SA3 Datasheet PDF

Data sheet