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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IAUC50N08S5L096ATMA1
Infineon Technologies

IAUC50N08S5L096ATMA1

Manufacturer Part Number IAUC50N08S5L096ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET_(75V 120V( PG-TDSON-8
Package PG-TDSON-8-33
In Stock 189526 pcs
Data sheet Orderable Part Number OPN Translation Table
Reference Price (In US Dollars)
5000 10000
$0.238 $0.229
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 24µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-33
Series OptiMOS™
Rds On (Max) @ Id, Vgs 9.6mOhm @ 25A, 10V
Power Dissipation (Max) 60W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1684 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 50A

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IAUC50N08S5L096ATMA1 Datasheet PDF

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