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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > FF200R12KE3B2HOSA1
Infineon Technologies

FF200R12KE3B2HOSA1

Manufacturer Part Number FF200R12KE3B2HOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1200V 295A 1050W
Package Module
In Stock 487 pcs
Data sheet
Reference Price (In US Dollars)
10
$73.57
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Supplier Device Package Module
Series -
Power - Max 1050 W
Package / Case Module
Package Tray
Operating Temperature -40°C ~ 125°C
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 14 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 5 mA
Current - Collector (Ic) (Max) 295 A
Configuration Half Bridge
Base Product Number FF200R12

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FF200R12KE3B2HOSA1 Datasheet PDF

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