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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > FD200R12KE3HOSA1
Infineon Technologies

FD200R12KE3HOSA1

Manufacturer Part Number FD200R12KE3HOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MODULE 1200V 1050W
Package Module
In Stock 621 pcs
Data sheet Mult Dev Wafer Site Add 17/Apr/2018
Reference Price (In US Dollars)
1
$53.651
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Supplier Device Package Module
Series C
Power - Max 1050 W
Package / Case Module
Package Tray
Operating Temperature -40°C ~ 125°C
Product Attribute Attribute Value
NTC Thermistor No
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 14 nF @ 25 V
Input Standard
IGBT Type Trench Field Stop
Current - Collector Cutoff (Max) 5 mA
Configuration Single Chopper
Base Product Number FD200R12

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FD200R12KE3HOSA1 Datasheet PDF

Data sheet