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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > F1235R12KT4GBOSA1
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F1235R12KT4GBOSA1

Manufacturer Part Number F1235R12KT4GBOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1200V 35A 210W
Package Module
In Stock 4914 pcs
Data sheet F12-35R12KT4GPart Number GuideDevice EOL 26/Oct/2016Device EOL Update 26/Oct/2016Wafer Site Add 13/Apr/2017
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 35A
Supplier Device Package Module
Series -
Power - Max 210 W
Package / Case Module
Package Bulk
Operating Temperature -40°C ~ 150°C (TJ)
Product Attribute Attribute Value
NTC Thermistor No
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 2 nF @ 25 V
Input Standard
IGBT Type Trench Field Stop
Current - Collector Cutoff (Max) 1 mA
Current - Collector (Ic) (Max) 35 A
Configuration Single

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F1235R12KT4GBOSA1 Datasheet PDF

Data sheet

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