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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSZ060NE2LSATMA1
Infineon Technologies

BSZ060NE2LSATMA1

Manufacturer Part Number BSZ060NE2LSATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 25V 12A/40A TSDSON
Package PG-TSDSON-8-FL
In Stock 323923 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018OptiMOS Wafer Addition 17/Dec/2015Mult Dev Site Add 30/Oct/2020BSZ060NE2LS DS 4/Jun/2021
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.307 $0.271 $0.208 $0.164 $0.132 $0.119
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TSDSON-8-FL
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 26W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
Base Product Number BSZ060

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BSZ060NE2LSATMA1 Datasheet PDF

Data sheet