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BSS83PE6327
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 80µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-SOT23
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
2Ohm @ 330mA, 10V
Power Dissipation (Max)
360mW (Ta)
Package / Case
TO-236-3, SC-59, SOT-23-3
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
3.57 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
330mA (Ta)
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BSS83PE6327 Datasheet PDF
Data sheet
Datasheet File Browse
