Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 130µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-SOT223-4-21
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
12Ohm @ 260mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Package / Case
TO-261-4, TO-261AA
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)
Base Product Number
BSP92
Recommended Products
BSPD120208Y1PSPD, 120KA, BASIC PKG., NEMA 4XEaton - Bussmann Electrical Division