Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-SOT223-4
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
130mOhm @ 2.9A, 10V
Power Dissipation (Max)
1.8W (Ta)
Package / Case
TO-261-4, TO-261AA
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
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