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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP317PL6327
Infineon Technologies

BSP317PL6327

Manufacturer Part Number BSP317PL6327
Manufacturer Infineon Technologies
Detailed Description P-CHANNEL MOSFET
Package PG-SOT223-4-21
In Stock 5753 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 370µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-SOT223-4-21
Series SIPMOS®
Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Package Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 430mA (Ta)
Base Product Number BSP317

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BSP317PL6327 Datasheet PDF