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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP149L6327HTSA1
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BSP149L6327HTSA1

Manufacturer Part Number BSP149L6327HTSA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 200V 660MA SOT223-4
Package PG-SOT223-4-21
In Stock 5892 pcs
Data sheet Part Number Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 400µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-SOT223-4-21
Series SIPMOS®
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V
FET Type N-Channel
FET Feature Depletion Mode
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)

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BSP149L6327HTSA1 Datasheet PDF

Data sheet

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