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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > BSM75GB170DN2HOSA1
Infineon Technologies

BSM75GB170DN2HOSA1

Manufacturer Part Number BSM75GB170DN2HOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1700V 110A 625W
Package Module
In Stock 3846 pcs
Data sheet BSM75GB170DN2Part Number GuideMult Device EOL Update 7/Jul/2016
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1700 V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Supplier Device Package Module
Series -
Power - Max 625 W
Package / Case Module
Package Tray
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
NTC Thermistor No
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 11 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector (Ic) (Max) 110 A
Configuration Half Bridge
Base Product Number BSM75G

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BSM75GB170DN2HOSA1 Datasheet PDF

Data sheet

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