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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > BSM35GB120DN2HOSA1
Infineon Technologies

BSM35GB120DN2HOSA1

Manufacturer Part Number BSM35GB120DN2HOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1200V 50A 280W
Package Module
In Stock 5909 pcs
Data sheet Mult Dev Substrate Add 17/Aug/2018Mult Dev EOL 12/Mar/2021
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Supplier Device Package Module
Series -
Power - Max 280 W
Package / Case Module
Package Tray
Operating Temperature 150°C (TJ)
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 2 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 1 mA
Current - Collector (Ic) (Max) 50 A
Configuration Half Bridge
Base Product Number BSM35GB120

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BSM35GB120DN2HOSA1 Datasheet PDF

Data sheet

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