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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > BSM25GD120DN2BOSA1
Infineon Technologies

BSM25GD120DN2BOSA1

Manufacturer Part Number BSM25GD120DN2BOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1200V 35A 200W
Package Module
In Stock 738 pcs
Data sheet
Reference Price (In US Dollars)
10
$51.861
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Supplier Device Package Module
Series -
Power - Max 200 W
Package / Case Module
Package Tray
Operating Temperature 150°C (TJ)
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 1.65 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 800 µA
Current - Collector (Ic) (Max) 35 A
Configuration Full Bridge
Base Product Number BSM25GD120

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BSM25GD120DN2BOSA1 Datasheet PDF

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