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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSG0810NDIATMA1
Infineon Technologies

BSG0810NDIATMA1

Manufacturer Part Number BSG0810NDIATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET 2N-CH 25V 19A/39A 8TISON
Package PG-TISON-8
In Stock 85106 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Wafer Diameter Add 7/Apr/2017
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$1.152 $1.034 $0.831 $0.683 $0.566 $0.527
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TISON-8
Series OptiMOS™
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Power - Max 2.5W
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 155°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 39A
Configuration 2 N-Channel (Dual) Asymmetrical
Base Product Number BSG0810

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BSG0810NDIATMA1 Datasheet PDF

Data sheet