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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC084P03NS3EGATMA1
Infineon Technologies

BSC084P03NS3EGATMA1

Manufacturer Part Number BSC084P03NS3EGATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET P-CH 30V 14.9A 8TDSON
Package PG-TDSON-8-5
In Stock 4724 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 23/Sep/2022Mult Device Assembly Site Add 6/Sep/2017
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 110µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-5
Series OptiMOS™
Rds On (Max) @ Id, Vgs 8.4mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 57.7 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc)
Base Product Number BSC084

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BSC084P03NS3EGATMA1 Datasheet PDF

Data sheet