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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC026N02KSG
Infineon Technologies

BSC026N02KSG

Manufacturer Part Number BSC026N02KSG
Manufacturer Infineon Technologies
Detailed Description BSC026N02 - 12V-300V N-CHANNEL P
Package PG-TDSON-8-1
In Stock 134382 pcs
Data sheet
Reference Price (In US Dollars)
363
$0.327
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.2V @ 200µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-1
Series OptiMOS™2
Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Package / Case 8-PowerTDFN
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 52.7 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 134A (Tc)

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BSC026N02KSG Datasheet PDF