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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > BCR35PNE6327BTSA1
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BCR35PNE6327BTSA1

Manufacturer Part Number BCR35PNE6327BTSA1
Manufacturer Infineon Technologies
Detailed Description TRANS NPN/PNP PREBIAS SOT363
Package PG-SOT363-PO
In Stock 6638 pcs
Data sheet Part Number GuideMultiple Devices 01/Mar/2011
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package PG-SOT363-PO
Series -
Resistor - Emitter Base (R2) 47kOhms
Resistor - Base (R1) 10kOhms
Power - Max 250mW
Product Attribute Attribute Value
Package / Case 6-VSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 100mA
Base Product Number BCR35

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BCR35PNE6327BTSA1 Datasheet PDF

Data sheet

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