Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
HEXFET®
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Power - Max
2W
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.5A, 2.3A
Configuration
N and P-Channel
Base Product Number
AUIRF9952
Recommended Products
AUIRF9Z34N-INFAUTOMOTIVE HEXFET P CHANNELInfineon Technologies
