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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.1V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-262
Series
-
Rds On (Max) @ Id, Vgs
14.5mOhm @ 20A, 10V
Power Dissipation (Max)
2.1W (Ta), 100W (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 58A (Tc)
Base Product Number
AOW29
Recommended Products
AOW2918MOSFET N-CH 100V 13A/90A TO262Alpha & Omega Semiconductor Inc.
