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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.8V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-262
Series
aMOS™
Rds On (Max) @ Id, Vgs
290mOhm @ 7.5A, 10V
Power Dissipation (Max)
208W (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
717 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
15.6 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Base Product Number
AOW15
Recommended Products
AOW12N65MOSFET N-CH 650V 12A TO262Alpha & Omega Semiconductor Inc.
