NTHL080N120SC1
Manufacturer Part Number | NTHL080N120SC1 |
---|---|
Manufacturer | onsemi |
Detailed Description | SILICON CARBIDE MOSFET, N-CHANNE |
Package | TO-247-3 |
In Stock | 6784 pcs |
Data sheet | NTHL080N120SC1 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.3V @ 5mA |
Vgs (Max) | +25V, -15V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-3 |
Series | - |
Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
Power Dissipation (Max) | 348W (Tc) |
Package / Case | TO-247-3 |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
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