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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4960N-1G
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NTD4960N-1G

Manufacturer Part Number NTD4960N-1G
Manufacturer onsemi
Detailed Description MOSFET N-CH 30V 8.9A/55A IPAK
Package I-PAK
In Stock 5811 pcs
Data sheet Multiple Devices 30/Sept/2011onsemi REACHonsemi RoHSNTD4960N
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-Pak
Series -
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
Power Dissipation (Max) 1.07W (Ta), 35.71W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 55A (Tc)
Base Product Number NTD49

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NTD4960N-1G Datasheet PDF

Data sheet

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