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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4809NH-1G
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NTD4809NH-1G

Manufacturer Part Number NTD4809NH-1G
Manufacturer onsemi
Detailed Description MOSFET N-CH 30V 9.6A/58A IPAK
Package I-PAK
In Stock 5616 pcs
Data sheet N(T,V)D4809NHMultiple Devices 24/Jan/2011onsemi RoHS
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK
Series -
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Power Dissipation (Max) 1.3W (Ta), 52W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2155 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc)
Base Product Number NTD48

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NTD4809NH-1G Datasheet PDF

Data sheet

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