NTBG080N120SC1
Reference Price (In US Dollars)
1
10
100
$5.755
$5.288
$4.466
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.3V @ 5mA
Vgs (Max)
+25, -15V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
D2PAK-7
Series
-
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Power Dissipation (Max)
179W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1154 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Base Product Number
NTBG080
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NTBG080N120SC1 Datasheet PDF
Data sheet
Datasheet File Browse
