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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBA123EDXV6T1G
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NSBA123EDXV6T1G

Manufacturer Part Number NSBA123EDXV6T1G
Manufacturer onsemi
Detailed Description TRANS 2PNP PREBIAS 0.5W SOT563
Package SOT-563
In Stock 6649 pcs
Data sheet Mult Dev 24/Apr/2020Carrier Tape 15/Aug/2017Mult Devices 27/Oct/2017onsemi RoHSMUN/SMUN5131DW1, NSBA123EDXV6
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563
Series -
Resistor - Emitter Base (R2) 2.2kOhms
Resistor - Base (R1) 2.2kOhms
Power - Max 500mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition -
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number NSBA123

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