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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSB13211DW6T1G
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NSB13211DW6T1G

Manufacturer Part Number NSB13211DW6T1G
Manufacturer onsemi
Detailed Description TRANS NPN/PNP PREBIAS 0.23W SC88
Package SC-88/SC70-6/SOT-363
In Stock 4824 pcs
Data sheet Multiple Devices 19/Dec/2008onsemi RoHSNSB13211DW6T1G
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363
Series -
Resistor - Emitter Base (R2) 4.7kOhms, 10kOhms
Resistor - Base (R1) 4.7kOhms, 10kOhms
Power - Max 230mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V / 15 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number NSB132

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NSB13211DW6T1G Datasheet PDF

Data sheet

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