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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD112-1G
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MJD112-1G

Manufacturer Part Number MJD112-1G
Manufacturer onsemi
Detailed Description TRANS NPN DARL 100V 2A IPAK
Package I-PAK
In Stock 300167 pcs
Data sheet onsemi REACHonsemi RoHSMJD112,117Assembly/Test Site 17/Feb/2023
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.402 $0.358 $0.279 $0.231 $0.182 $0.17 $0.161 $0.155
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Transistor Type NPN - Darlington
Supplier Device Package I-PAK
Series -
Power - Max 1.75 W
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA
Current - Collector (Ic) (Max) 2 A
Base Product Number MJD112

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MJD112-1G Datasheet PDF

Data sheet