HUF76609D3
Manufacturer Part Number | HUF76609D3 |
---|---|
Manufacturer | onsemi |
Detailed Description | MOSFET N-CH 100V 10A IPAK |
Package | I-PAK |
In Stock | 5865 pcs |
Data sheet | HUF76609D3, HUF76609D3SMultiple Devices 14/Mar/2011onsemi REACHonsemi RoHS |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I-PAK |
Series | UltraFET™ |
Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
Power Dissipation (Max) | 49W (Tc) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Package | Tube |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Base Product Number | HUF76 |
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