HUF75329D3
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
I-PAK
Series
UltraFET™
Rds On (Max) @ Id, Vgs
26mOhm @ 20A, 10V
Power Dissipation (Max)
128W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Base Product Number
HUF75
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Data sheet
Datasheet File Browse
