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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG12N60A4D
onsemi

HGTG12N60A4D

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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 390V, 12A, 10Ohm, 15V
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55µJ (on), 50µJ (off)
Supplier Device Package TO-247-3
Series -
Reverse Recovery Time (trr) 30 ns
Power - Max 167 W
Package / Case TO-247-3
Product Attribute Attribute Value
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type -
Gate Charge 78 nC
Current - Collector Pulsed (Icm) 96 A
Current - Collector (Ic) (Max) 54 A
Base Product Number HGTG12N60

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HGTG12N60A4D Datasheet PDF

Data sheet