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FQPF19N20CYDTU
Manufacturer Part Number
FQPF19N20CYDTU
Manufacturer
onsemi
Detailed Description
MOSFET N-CH 200V 19A TO220F-3
Package
TO-220F-3 (Y-Forming)
In Stock
3845 pcs
Data sheet
onsemi RoHS
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220F-3 (Y-Forming)
Series
QFET®
Rds On (Max) @ Id, Vgs
170mOhm @ 9.5A, 10V
Power Dissipation (Max)
43W (Tc)
Package / Case
TO-220-3 Full Pack, Formed Leads
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Base Product Number
FQPF1
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FQPF19N20CYDTU Datasheet PDF
Data sheet
Datasheet File Browse
