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FQN1N50CTA
Reference Price (In US Dollars)
1
10
100
500
1000
$0.221
$0.194
$0.149
$0.118
$0.094
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-92-3
Series
QFET®
Rds On (Max) @ Id, Vgs
6Ohm @ 190mA, 10V
Power Dissipation (Max)
890mW (Ta), 2.08W (Tc)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Package
Cut Tape (CT)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
380mA (Tc)
Base Product Number
FQN1N50
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Data sheet
Datasheet File Browse
