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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQH8N100C
onsemi

FQH8N100C

Manufacturer Part Number FQH8N100C
Manufacturer onsemi
Detailed Description MOSFET N-CH 1000V 8A TO247-3
Package TO-247-3
In Stock 43852 pcs
Data sheet Logo 17/Aug/2017Mult Devices 24/Oct/2017Dimension/Color Change 24/Feb/2021Mult Dev EOL 23/Dec/2021onsemi REACHonsemi RoHSMult Dev Assembly/DS Chg 6/Jan/2019Packing quantity increase 28/Dec/2020FQH8N100C
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$2.007 $1.803 $1.477 $1.258 $1.061 $1.008
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247-3
Series QFET®
Rds On (Max) @ Id, Vgs 1.45Ohm @ 4A, 10V
Power Dissipation (Max) 225W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Base Product Number FQH8N100

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FQH8N100C Datasheet PDF

Data sheet

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