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FQD6N60CTM-WS
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-252AA
Series
QFET®
Rds On (Max) @ Id, Vgs
2Ohm @ 2A, 10V
Power Dissipation (Max)
80W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Base Product Number
FQD6N60
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FQD6N60CTM-WS Datasheet PDF
Data sheet
Datasheet File Browse
