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FQB4N80TM
Reference Price (In US Dollars)
1
10
100
$0.683
$0.613
$0.493
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D²PAK (TO-263)
Series
QFET®
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Base Product Number
FQB4N80
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Data sheet
Datasheet File Browse
