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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB33N10TM
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FQB33N10TM

Manufacturer Part Number FQB33N10TM
Manufacturer onsemi
Detailed Description MOSFET N-CH 100V 33A D2PAK
Package D²PAK (TO-263)
In Stock 4537 pcs
Data sheet Description Chg 01/Apr/2016Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev Box Chgs 1/Jul/2021Mult Dev EOL 21/Dec/2021onsemi REACHonsemi RoHSUpdate 29/Sep/2020
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series QFET®
Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V
Power Dissipation (Max) 3.75W (Ta), 127W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Base Product Number FQB33N10

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FQB33N10TM Datasheet PDF

Data sheet