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FQB19N10LTM
Manufacturer Part Number
FQB19N10LTM
Manufacturer
onsemi
Detailed Description
MOSFET N-CH 100V 19A D2PAK
Package
D²PAK (TO-263)
In Stock
5362 pcs
Data sheet
FQB19N10L, FQI19N10L onsemi RoHS
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D²PAK (TO-263)
Series
QFET®
Rds On (Max) @ Id, Vgs
100mOhm @ 9.5A, 10V
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Base Product Number
FQB1
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FQB19N10LTM Datasheet PDF
Data sheet
Datasheet File Browse
