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FQA33N10L
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-3P
Series
QFET®
Rds On (Max) @ Id, Vgs
52mOhm @ 18A, 10V
Power Dissipation (Max)
163W (Tc)
Package / Case
TO-3P-3, SC-65-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Base Product Number
FQA3
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Data sheet
Datasheet File Browse