FGY75T95LQDT
Manufacturer Part Number | FGY75T95LQDT |
---|---|
Manufacturer | onsemi |
Detailed Description | IGBT 950V 75A |
Package | TO-247-3 |
In Stock | 12762 pcs |
Data sheet | Dimension/Color Change 24/Feb/2021Mult Dev EOL 8/Apr/2021onsemi RoHSPacking quantity increase 28/Dec/2020Mult Dev Wafer Fab Chgs 30/Apr/2020FGY75T95LQDT |
Reference Price (In US Dollars)
1 | 10 | 100 |
---|---|---|
$3.809 | $3.441 | $2.849 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Collector Emitter Breakdown (Max) | 950 V |
Vce(on) (Max) @ Vge, Ic | 1.69V @ 15V, 75A |
Test Condition | 600V, 37.5A, 4.7Ohm, 15V |
Td (on/off) @ 25°C | 52ns/496ns |
Switching Energy | 2mJ (on), 1.8mJ (off) |
Supplier Device Package | TO-247-3 |
Series | - |
Reverse Recovery Time (trr) | 259 ns |
Power - Max | 453 W |
Package / Case | TO-247-3 |
Product Attribute | Attribute Value |
---|---|
Package | Tube |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Input Type | Standard |
IGBT Type | Trench Field Stop |
Gate Charge | 663.3 nC |
Current - Collector Pulsed (Icm) | 225 A |
Current - Collector (Ic) (Max) | 150 A |
Base Product Number | FGY75 |
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INSULATED GATE BIPOLAR TRANSISTOFairchild Semiconductor