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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDD8896-G
onsemi

FDD8896-G

Manufacturer Part Number FDD8896-G
Manufacturer onsemi
Detailed Description MOSFET N-CH 30V TO252AA
Package TO-252AA
In Stock 4307 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252AA
Rds On (Max) @ Id, Vgs 5.7mOhm @ 35A, 10V
Power Dissipation (Max) 80W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2525 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 94A (Tc)

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FDD8896-G Datasheet PDF