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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDD10N20LZTM
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FDD10N20LZTM

Manufacturer Part Number FDD10N20LZTM
Manufacturer onsemi
Detailed Description MOSFET N-CH 200V 7.6A DPAK
Package TO-252AA
In Stock 6330 pcs
Data sheet Tape and Box/Reel Barcode Update 07/Aug/2014Description Chg 01/Apr/2016Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev EOL 23/Dec/2021onsemi RoHSMult Dev 13/Aug/2020
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252AA
Series UniFET™
Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V
Power Dissipation (Max) 83W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Base Product Number FDD10N20

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FDD10N20LZTM Datasheet PDF

Data sheet

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