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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB8832
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FDB8832

Manufacturer Part Number FDB8832
Manufacturer onsemi
Detailed Description MOSFET N-CH 30V 34A/80A TO263AB
Package D²PAK (TO-263)
In Stock 6864 pcs
Data sheet Description Chg 01/Apr/2016TO263 31/Aug/2016Logo 17/Aug/2017Mult Dev Box Chgs 1/Jul/2021Mult Dev EOL 8/Apr/2021onsemi REACHonsemi RoHSMult Dev Assembly/Material Chgs 15/Mar/2018FDB8832
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series PowerTrench®
Rds On (Max) @ Id, Vgs 1.9mOhm @ 80A, 10V
Power Dissipation (Max) 300W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 80A (Tc)
Base Product Number FDB883

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FDB8832 Datasheet PDF

Data sheet