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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > FAM65HR51DS2
onsemi

FAM65HR51DS2

Manufacturer Part Number FAM65HR51DS2
Manufacturer onsemi
Detailed Description IGBT MODULE 650V 33A 135W
Package Tube
In Stock 4055 pcs
Data sheet Improve FAB Process Variation 16/Feb/2023Tube Design Change 11/Nov/2022onsemi REACHonsemi RoHSFAM65HR51DS1,S2,S3
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic -
Series -
Power - Max 135 W
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Cies) @ Vce 4.86 nF @ 400 V
Input Standard
IGBT Type -
Current - Collector (Ic) (Max) 33 A
Configuration Half Bridge Inverter
Base Product Number FAM65

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FAM65HR51DS2 Datasheet PDF

Data sheet